IRFP064N MOSFET DESCRIPTION. onlineinfotechs



Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.


  • Type Designator: IRFP064N
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 200 W
  • Maximum Drain-Source Voltage |Vds|: 55 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 110 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 170(max) nC
  • Rise Time (tr): 100 nS
  • Drain-Source Capacitance (Cd): 1300 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Post a Comment